{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837417","patent":{"patent_number":"US-9837417","title":"Semiconductor device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-12-14T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a semiconductor substrate having a first region and a second region, a plurality of first semiconductor fins in the first region, a plurality of second semiconductor fins in the second region, a first solid-state dopant source layer within the first region on the semiconductor substrate, a first insulating buffer layer on the first solid-state dopant source layer, a second solid-state dopant source layer within the second region on the semiconductor substrate, a second insulating buffer layer on the second solid-state dopant source layer and on the first insulating buffer layer, a first fin bump in the first region, and a second fin bump in the second region. The first fin bump includes a first sidewall spacer and the second fin bump comprises a second sidewall spacer. The first sidewall spacer has a structure that is different from that of the second sidewall spacer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for fabricating the same","description":"A semiconductor device includes a semiconductor substrate having a first region and a second region, a plurality of first semiconductor fins in the first region, a plurality of second semiconductor fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837417","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837417","citation_suggestion":"Patentable. \"Semiconductor device and method for fabricating the same\" (US-9837417). https://patentable.app/patents/US-9837417","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837417","json":"https://patentable.app/api/llm-context/US-9837417","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:46:55.517Z"}