{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837427","patent":{"patent_number":"US-9837427","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2017-01-23T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the time of forming sidewalls having two kinds of different widths on a substrate. A sidewall-shaped silicon oxide film is formed over each sidewall of a gate electrode of a low breakdown voltage MISFET and a pattern including a control gate electrode and a memory gate electrode. Then, a silicon oxide film beside the gate electrode is removed, and a silicon oxide film is formed on a semiconductor substrate, and then etchback is performed. Accordingly, a sidewall, formed of a silicon nitride film and the silicon oxide film, is formed beside the gate electrode, and a sidewall, formed of the silicon nitride film and the silicon oxide films, is formed beside the pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837427","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837427","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9837427). https://patentable.app/patents/US-9837427","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837427","json":"https://patentable.app/api/llm-context/US-9837427","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:37:09.634Z"}