{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837434","patent":{"patent_number":"US-9837434","title":"Semiconductor memory device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-09-16T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing same","description":"A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837434","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837434","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing same\" (US-9837434). https://patentable.app/patents/US-9837434","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837434","json":"https://patentable.app/api/llm-context/US-9837434","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:20:20.952Z"}