{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837439","patent":{"patent_number":"US-9837439","title":"Compensation of temperature effects in semiconductor device structures","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"The present disclosure provides a semiconductor device structure including a substrate having a semiconductor-on-insulator (SOI) region and a hybrid region, wherein the SOI region and the hybrid region are separated by at least one isolation structure, the SOI region being formed by a semiconductor layer provided over a substrate material and a buried insulating material interposed between the semiconductor layer and the substrate material, a semiconductor device provided in the SOI region, the semiconductor device comprising a gate structure and source and drain regions formed adjacent to the gate structure, and a diode structure provided in the hybrid region, the diode structure comprising a well region doped with dopants of a first conductivity type and a well portion doped with dopants of a second conductivity type embedded into the well region in the hybrid region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Compensation of temperature effects in semiconductor device structures","description":"The present disclosure provides a semiconductor device structure including a substrate having a semiconductor-on-insulator (SOI) region and a hybrid region, wherein the SOI region and the hybrid regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837439","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837439","citation_suggestion":"Patentable. \"Compensation of temperature effects in semiconductor device structures\" (US-9837439). https://patentable.app/patents/US-9837439","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837439","json":"https://patentable.app/api/llm-context/US-9837439","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:50.319Z"}