{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837485","patent":{"patent_number":"US-9837485","title":"High-density MIM capacitors","assignee":null,"inventors":[],"filing_date":"2016-04-05T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap. A capacitor stack is deposited in the gap and on the conducting lines. Respective contacts are deposited on the conducting lines and on the capacitor stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-density MIM capacitors","description":"Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap. A","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837485","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837485","citation_suggestion":"Patentable. \"High-density MIM capacitors\" (US-9837485). https://patentable.app/patents/US-9837485","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837485","json":"https://patentable.app/api/llm-context/US-9837485","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:15:19.488Z"}