{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837494","patent":{"patent_number":"US-9837494","title":"Production method for group III nitride semiconductor and group III nitride semiconductor","assignee":null,"inventors":[],"filing_date":"2013-03-18T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":34,"abstract":"A method for producing a Group III nitride semiconductor comprising forming mesas on a main surface of a substrate, and growing Group III nitride semiconductor in a c-axis direction thereof, wherein the plane most parallel to the side surfaces of the mesas or the dents among the low-index planes of growing Group III nitride semiconductor is a m-plane (1-100), and when a projected vector obtained by orthogonally projecting a normal vector of the processed side surface to the main surface is defined as a lateral vector, an angle between the lateral vector and a projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface is 0.5° or more and 6° or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Production method for group III nitride semiconductor and group III nitride semiconductor","description":"A method for producing a Group III nitride semiconductor comprising forming mesas on a main surface of a substrate, and growing Group III nitride semiconductor in a c-axis direction thereof, wherein t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837494","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837494","citation_suggestion":"Patentable. \"Production method for group III nitride semiconductor and group III nitride semiconductor\" (US-9837494). https://patentable.app/patents/US-9837494","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837494","json":"https://patentable.app/api/llm-context/US-9837494","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:11.090Z"}