{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837504","patent":{"patent_number":"US-9837504","title":"Method of modifying capping layer in semiconductor structure","assignee":null,"inventors":[],"filing_date":"2015-10-28T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating the gate structure in a semiconductor device includes forming a gate dielectric layer over a semiconductor substrate. A capping layer is formed over the gate dielectric layer. The capping layer is treated with a first hydrogen plasma to form a first-treated capping layer. A gate electrode is formed over the first-treated capping layer. The method may further includes treating the first-treated capping layer with a nitrogen plasma."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of modifying capping layer in semiconductor structure","description":"A method of fabricating the gate structure in a semiconductor device includes forming a gate dielectric layer over a semiconductor substrate. A capping layer is formed over the gate dielectric layer. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837504","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837504","citation_suggestion":"Patentable. \"Method of modifying capping layer in semiconductor structure\" (US-9837504). https://patentable.app/patents/US-9837504","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837504","json":"https://patentable.app/api/llm-context/US-9837504","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:55:05.709Z"}