{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837519","patent":{"patent_number":"US-9837519","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-11-08T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"The semiconductor device includes a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and the barrier layer which are formed above a substrate, a gate electrode arranged within the groove through a gate insulating film, and a source electrode and a drain electrode which are formed above the barrier layer on both sides of the gate electrode. The n-type layer and the drain electrode are electrically coupled by a connection portion that reaches the n+ layer. The p-type layer and the source electrode are electrically coupled by a connection portion that reaches the p-type layer. A diode including a p-type layer and an n-type layer is provided between the source electrode and the drain electrode, to thereby prevent the breaking of an element caused by an avalanche breakdown."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"The semiconductor device includes a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837519","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837519","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9837519). https://patentable.app/patents/US-9837519","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837519","json":"https://patentable.app/api/llm-context/US-9837519","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:59:40.382Z"}