{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837524","patent":{"patent_number":"US-9837524","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-11-01T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with agate insulating film in between, the first opening running up to the middle of the channel layer through the barrier layer. The concentration of two-dimensional electron gas in a first region on either side of a second opening that will have a channel is controlled to be lower than the concentration of two-dimensional electron gas in a second region between an end of the first region and a source or drain electrode. The concentration of the two-dimensional electron gas in the first region is thus decreased, thereby the conduction band-raising effect of polarization charge is prevented from being reduced. This prevents a decrease in threshold potential, and thus improves normally-off operability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with agate insulating film ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837524","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837524","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-9837524). https://patentable.app/patents/US-9837524","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837524","json":"https://patentable.app/api/llm-context/US-9837524","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:11:36.804Z"}