{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837527","patent":{"patent_number":"US-9837527","title":"Semiconductor device with a trench electrode","assignee":null,"inventors":[],"filing_date":"2015-12-02T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":28,"abstract":"A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and drift regions; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the trench bottom; a gate electrode in the trench and dielectrically insulated from the source, body, diode and drift regions by a gate dielectric; a further trench extending from a first surface of the semiconductor body into the semiconductor body; a source electrode arranged in the further trench adjoining the source and diode regions. The diode region includes a lower diode region arranged below the trench bottom. The lower diode region has a maximum of a doping concentration distant to the trench bottom."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a trench electrode","description":"A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837527","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837527","citation_suggestion":"Patentable. \"Semiconductor device with a trench electrode\" (US-9837527). https://patentable.app/patents/US-9837527","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837527","json":"https://patentable.app/api/llm-context/US-9837527","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:59:27.024Z"}