{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837536","patent":{"patent_number":"US-9837536","title":"Semiconductor device including fin structures and manufacturing method therof","assignee":null,"inventors":[],"filing_date":"2016-07-12T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":21,"abstract":"A semiconductor device includes a Fin FET transistor. The Fin FET transistor includes a first fin structure extending in a first direction, a gate stack and a source and a drain. The gate stack includes a gate electrode layer and a gate dielectric layer, covers a portion of the fin structure and extends in a second direction perpendicular to the first direction. Each of the source and drain includes a stressor layer disposed over the fin structure. The stressor layer applies a stress to a channel layer of the fin structure under the gate stack. The stressor layer penetrates under the gate stack. A vertical interface between the stressor layer and the fin structure under the gate stack in a third direction perpendicular to the first and second directions includes a flat area, and the flat area extends in the second direction and the third direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including fin structures and manufacturing method therof","description":"A semiconductor device includes a Fin FET transistor. The Fin FET transistor includes a first fin structure extending in a first direction, a gate stack and a source and a drain. The gate stack includ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837536","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837536","citation_suggestion":"Patentable. \"Semiconductor device including fin structures and manufacturing method therof\" (US-9837536). https://patentable.app/patents/US-9837536","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837536","json":"https://patentable.app/api/llm-context/US-9837536","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:17.029Z"}