{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837550","patent":{"patent_number":"US-9837550","title":"Thin film transistor substrate and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-10-27T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor substrate and method of fabricating the same","description":"A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide sem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837550","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837550","citation_suggestion":"Patentable. \"Thin film transistor substrate and method of fabricating the same\" (US-9837550). https://patentable.app/patents/US-9837550","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837550","json":"https://patentable.app/api/llm-context/US-9837550","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:05.519Z"}