{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837563","patent":{"patent_number":"US-9837563","title":"MBE growth technique for group II-VI inverted multijunction solar cells","assignee":null,"inventors":[],"filing_date":"2009-12-17T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":37,"abstract":"A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MBE growth technique for group II-VI inverted multijunction solar cells","description":"A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837563","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837563","citation_suggestion":"Patentable. \"MBE growth technique for group II-VI inverted multijunction solar cells\" (US-9837563). https://patentable.app/patents/US-9837563","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837563","json":"https://patentable.app/api/llm-context/US-9837563","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:18.813Z"}