{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9837602","patent":{"patent_number":"US-9837602","title":"Spin-orbit torque bit design for improved switching efficiency","assignee":null,"inventors":[],"filing_date":"2015-12-16T00:00:00.000Z","publication_date":"2017-12-05T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":24,"abstract":"A method for a non-volatile memory cell; specifically, a spin orbit torque MRAM (SOT-MRAM) memory cell which reduces the current required to switch individual bits. The memory cell includes a first interconnect line having a first longitudinal axis, an elliptically shaped MTJ bit (“bit”) having a long axis, and a second interconnect line having a second longitudinal axis perpendicular to the first interconnect line. The bit includes a polarized free layer, a barrier layer, and a polarized reference layer with a magnetic moment pinned at an angle different from the long axis. By disposing the long axis at an angle relative to the first longitudinal axis and second longitudinal axis and the reference layer as described, and applying a voltage to the interconnect line, a non-zero equilibrium angle can be induced between the free layer and the spin current or the Rashba field resulting in more coherent switching dynamics."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin-orbit torque bit design for improved switching efficiency","description":"A method for a non-volatile memory cell; specifically, a spin orbit torque MRAM (SOT-MRAM) memory cell which reduces the current required to switch individual bits. The memory cell includes a first in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9837602","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9837602","citation_suggestion":"Patentable. \"Spin-orbit torque bit design for improved switching efficiency\" (US-9837602). https://patentable.app/patents/US-9837602","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9837602","json":"https://patentable.app/api/llm-context/US-9837602","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:00:59.798Z"}