{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9840645","patent":{"patent_number":"US-9840645","title":"Underfill material and method for manufacturing semiconductor device using the same","assignee":null,"inventors":[],"filing_date":"2014-09-10T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"An underfill film material and a method for manufacturing a semiconductor device using the same which enables voidless mounting and favorable solder bonding properties are provided. An underfill material is used which contains an epoxy resin, an acid anhydride, an acrylic resin and an organic peroxide, the underfill material exhibits non-Bingham fluidity at a temperature ranging from 60° C. to 100° C., a storage modulus G′ measured by dynamic viscosity measurement has an inflection point in an angular frequency region below 10E+02 rad/s, and the storage modulus G′ in the angular frequency below the inflection point is 10E+05 Pa or more and 10E+06 Pa or less. This enables voidless packaging and excellent solder connection properties."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Underfill material and method for manufacturing semiconductor device using the same","description":"An underfill film material and a method for manufacturing a semiconductor device using the same which enables voidless mounting and favorable solder bonding properties are provided. An underfill mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9840645","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9840645","citation_suggestion":"Patentable. \"Underfill material and method for manufacturing semiconductor device using the same\" (US-9840645). https://patentable.app/patents/US-9840645","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9840645","json":"https://patentable.app/api/llm-context/US-9840645","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:59:45.215Z"}