{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842634","patent":{"patent_number":"US-9842634","title":"Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods","assignee":null,"inventors":[],"filing_date":"2015-09-23T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":28,"abstract":"Write-assist circuits for memory bit cells (“bit cells”) employing a P-type Field-Effect transistor (PFET) write port(s) are disclosed. Related methods and systems are also disclosed. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type Field-Effect transistor (NFET) drive current for like-dimensioned FETs. In this regard, in one aspect, it is desired to provide bit cells having PFET write ports, as opposed to NFET write ports, to reduce memory write times to the bit cells, and thus improve memory performance. To mitigate a write contention that could otherwise occur when writing data to bit cells, a write-assist circuit provided in the form of negative wordline boost circuit can be employed to strengthen a PFET access transistor in a memory bit cell having a PFET write port(s)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods","description":"Write-assist circuits for memory bit cells (“bit cells”) employing a P-type Field-Effect transistor (PFET) write port(s) are disclosed. Related methods and systems are also disclosed. It has been obse","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842634","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842634","citation_suggestion":"Patentable. \"Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods\" (US-9842634). https://patentable.app/patents/US-9842634","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842634","json":"https://patentable.app/api/llm-context/US-9842634","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:35:13.236Z"}