{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842636","patent":{"patent_number":"US-9842636","title":"Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium","assignee":null,"inventors":[],"filing_date":"2016-04-21T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":12,"abstract":"Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0<x≦0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium","description":"Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0<x≦0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and intr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842636","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842636","citation_suggestion":"Patentable. \"Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium\" (US-9842636). https://patentable.app/patents/US-9842636","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842636","json":"https://patentable.app/api/llm-context/US-9842636","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:30:21.629Z"}