{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842737","patent":{"patent_number":"US-9842737","title":"Self-aligned quadruple patterning process","assignee":null,"inventors":[],"filing_date":"2016-02-17T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned quadruple patterning process","description":"Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842737","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842737","citation_suggestion":"Patentable. \"Self-aligned quadruple patterning process\" (US-9842737). https://patentable.app/patents/US-9842737","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842737","json":"https://patentable.app/api/llm-context/US-9842737","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:23.120Z"}