{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842760","patent":{"patent_number":"US-9842760","title":"Method for fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-07-20T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the spacer is used as mask to remove part of the substrate for forming an isolation trench, in which the isolation trench includes two sidewall portions and a bottom portion. Next, a plasma doping process is conducted to implant dopants into the two sidewall portions and the bottom portion of the isolation trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device","description":"A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the space","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842760","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842760","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device\" (US-9842760). https://patentable.app/patents/US-9842760","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842760","json":"https://patentable.app/api/llm-context/US-9842760","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:27.956Z"}