{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842763","patent":{"patent_number":"US-9842763","title":"Method for manufacturing bonded wafer","assignee":null,"inventors":[],"filing_date":"2015-08-28T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for manufacturing a bonded wafer using a base wafer which is an epitaxial wafer produced by a method including at least one of: (1) setting a chamfer width of a wafer for epitaxial growth to be 0.20 mm or less on an epitaxial growth side; (2) preparing a wafer for epitaxial growth having a rise shape on an epitaxial growth side periphery, thereby adjusting the wafer to have an amount of sag within a range of −30 nm/mm2 to +10 nm/mm2 on a bonding surface side periphery; and (3) adjusting epitaxial growth conditions so a change in amount of sag before and after growth becomes a positive value, thereby adjusting the wafer to have sag within a range of −30 nm/mm2 to +10 nm/mm2. The method can manufacture a bonded wafer with a small terrace width even when an epitaxial wafer is used as the base wafer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bonded wafer","description":"A method for manufacturing a bonded wafer using a base wafer which is an epitaxial wafer produced by a method including at least one of: (1) setting a chamfer width of a wafer for epitaxial growth to ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842763","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842763","citation_suggestion":"Patentable. \"Method for manufacturing bonded wafer\" (US-9842763). https://patentable.app/patents/US-9842763","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842763","json":"https://patentable.app/api/llm-context/US-9842763","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:39:42.014Z"}