{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842768","patent":{"patent_number":"US-9842768","title":"Method for forming semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2017-04-18T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a first dielectric layer and a first conductive structure over a substrate. The first dielectric layer surrounds the first conductive structure. The method includes forming a second dielectric layer over the first dielectric layer. The second dielectric layer has an opening exposing the first conductive structure. The method includes forming a seal layer over the first conductive structure and an inner wall of the opening. The seal layer is in direct contact with the first dielectric layer and the second dielectric layer, and the seal layer includes a dielectric material comprising an oxygen compound. The method includes removing the seal layer over the first conductive structure. The method includes filling a second conductive structure into the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device structure","description":"A method for forming a semiconductor device structure is provided. The method includes forming a first dielectric layer and a first conductive structure over a substrate. The first dielectric layer su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842768","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842768","citation_suggestion":"Patentable. \"Method for forming semiconductor device structure\" (US-9842768). https://patentable.app/patents/US-9842768","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842768","json":"https://patentable.app/api/llm-context/US-9842768","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:34:59.621Z"}