{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842801","patent":{"patent_number":"US-9842801","title":"Self-aligned via and air gap","assignee":null,"inventors":[],"filing_date":"2016-05-16T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Provided are approaches for forming a self-aligned via and an air gap within a semiconductor device. Specifically, one approach produces a device having: a first metal line beneath a second metal line within an ultra low-k (ULK) dielectric, the first metal line connected to the second metal line by a first via; a dielectric capping layer formed over the second metal line; a third metal line within first and second via openings formed within a ULK fill material formed over the dielectric capping layer, wherein the third metal line within the first via opening extends to a top surface of the dielectric capping layer, and wherein the third metal line within the second via opening is connected to the second metal by a second via passing through the dielectric capping layer; and an air gap formed between the third metal line within the first and seconds via openings."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned via and air gap","description":"Provided are approaches for forming a self-aligned via and an air gap within a semiconductor device. Specifically, one approach produces a device having: a first metal line beneath a second metal line","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842801","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842801","citation_suggestion":"Patentable. \"Self-aligned via and air gap\" (US-9842801). https://patentable.app/patents/US-9842801","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842801","json":"https://patentable.app/api/llm-context/US-9842801","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:38.114Z"}