{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842841","patent":{"patent_number":"US-9842841","title":"Semiconductor device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-09-10T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of fabricating the same","description":"A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842841","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842841","citation_suggestion":"Patentable. \"Semiconductor device and method of fabricating the same\" (US-9842841). https://patentable.app/patents/US-9842841","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842841","json":"https://patentable.app/api/llm-context/US-9842841","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:05.254Z"}