{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842845","patent":{"patent_number":"US-9842845","title":"Method of forming a semiconductor device structure and semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a semiconductor device structure including a non-volatile memory (NVM) device structure in and above a first region of a semiconductor substrate and a logic device formed in and above a second region of the semiconductor substrate different from the first region. The NVM device structure includes a floating-gate, a first select gate and at least one control gate. The logic device includes a logic gate disposed on the second region and source/drain regions provided in the second region adjacent to the logic gate. The control gate extends over the floating-gate and the first select gate is laterally separated from the floating-gate by an insulating material layer portion. Upon forming the semiconductor device structure, the floating gate is formed before forming the control gate and the logic device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a semiconductor device structure and semiconductor device structure","description":"The present disclosure provides a semiconductor device structure including a non-volatile memory (NVM) device structure in and above a first region of a semiconductor substrate and a logic device form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842845","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842845","citation_suggestion":"Patentable. \"Method of forming a semiconductor device structure and semiconductor device structure\" (US-9842845). https://patentable.app/patents/US-9842845","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842845","json":"https://patentable.app/api/llm-context/US-9842845","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:00:10.231Z"}