{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842847","patent":{"patent_number":"US-9842847","title":"Drain select gate formation methods and apparatus","assignee":null,"inventors":[],"filing_date":"2015-02-11T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Some embodiments include a string of charge storage devices formed along a vertical channel of semiconductor material; a gate region of a drain select gate (SGD) transistor, the gate region at least partially surrounding the vertical channel; a dielectric barrier formed in the gate region; a first isolation layer formed above the gate region and the dielectric barrier; a drain region of the SGD transistor formed above the vertical channel; and a second isolation layer formed above the first isolation layer and the drain region, wherein the second isolation layer includes a conductive contact in electrical contact with the drain region of the SGD transistor. Additional apparatus and methods are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Drain select gate formation methods and apparatus","description":"Some embodiments include a string of charge storage devices formed along a vertical channel of semiconductor material; a gate region of a drain select gate (SGD) transistor, the gate region at least p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842847","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842847","citation_suggestion":"Patentable. \"Drain select gate formation methods and apparatus\" (US-9842847). https://patentable.app/patents/US-9842847","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842847","json":"https://patentable.app/api/llm-context/US-9842847","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:04:22.601Z"}