{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842902","patent":{"patent_number":"US-9842902","title":"Method for producing surrounding gate semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-08-09T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"An SGT is produced by forming a first insulating film around a fin-shaped semiconductor layer, forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped layer, forming a second insulating film, a polysilicon gate electrode covering the second insulating film, and a polysilicon gate line, forming a diffusion layer in an upper portion of the fin-shaped layer and a lower portion of the pillar-shaped layer, forming a metal-semiconductor compound in an upper portion of the diffusion layer in the fin-shaped layer, depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and gate line, depositing a first metal, forming a metal gate electrode and a metal gate line, and forming a third metal sidewall on an upper side wall of the pillar-shaped layer. The third metal sidewall is connected to an upper surface of the pillar-shaped layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing surrounding gate semiconductor device","description":"An SGT is produced by forming a first insulating film around a fin-shaped semiconductor layer, forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped layer, forming a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842902","citation_suggestion":"Patentable. \"Method for producing surrounding gate semiconductor device\" (US-9842902). https://patentable.app/patents/US-9842902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842902","json":"https://patentable.app/api/llm-context/US-9842902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:15:50.564Z"}