{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842906","patent":{"patent_number":"US-9842906","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-05-01T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate ele","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842906","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9842906). https://patentable.app/patents/US-9842906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842906","json":"https://patentable.app/api/llm-context/US-9842906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:51.071Z"}