{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842907","patent":{"patent_number":"US-9842907","title":"Memory device containing cobalt silicide control gate electrodes and method of making thereof","assignee":null,"inventors":[],"filing_date":"2015-09-29T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"An alternating stack of insulating layers and sacrificial material layers can be formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backside recesses are formed by removing the sacrificial material layers from the backside trench selective to the insulating layers. A cobalt-semiconductor alloy portion is formed in each backside recess by reacting cobalt and a semiconductor material. Conductive material in the backside trench can be removed by an etch to electrically isolate cobalt-containing alloy portions located in different backside recesses. Electrically conductive layers including a respective cobalt-semiconductor alloy portion can be employed as word lines of a three-dimensional memory device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device containing cobalt silicide control gate electrodes and method of making thereof","description":"An alternating stack of insulating layers and sacrificial material layers can be formed over a substrate. Memory stack structures and a backside trench are formed through the alternating stack. Backsi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842907","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842907","citation_suggestion":"Patentable. \"Memory device containing cobalt silicide control gate electrodes and method of making thereof\" (US-9842907). https://patentable.app/patents/US-9842907","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842907","json":"https://patentable.app/api/llm-context/US-9842907","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:02:53.943Z"}