{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842914","patent":{"patent_number":"US-9842914","title":"Nanosheet FET with wrap-around inner spacer","assignee":null,"inventors":[],"filing_date":"2016-08-19T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor device and resulting structures having stacked nanosheets with a wrap-around inner spacer by forming a nanosheet stack disposed above a substrate; forming a top sacrificial layer on a top surface of the nanosheet stack; forming a sidewall sacrificial layer on two opposite sidewalls of the nanosheet stack, such that a first and a second end of a first vertically-stacked nanosheet are exposed; removing the sidewall sacrificial layer, a portion of a first and a second end of a first sacrificial layer, and a portion of a first and a second end of a top sacrificial layer to expose portions of the first vertically-stacked nanosheet; and forming an inner spacer region on the first vertically-stacked nanosheet to replace the removed sidewall sacrificial layer, the removed portions of the first sacrificial layer, and the removed portions of the top sacrificial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanosheet FET with wrap-around inner spacer","description":"A method of forming a semiconductor device and resulting structures having stacked nanosheets with a wrap-around inner spacer by forming a nanosheet stack disposed above a substrate; forming a top sac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842914","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842914","citation_suggestion":"Patentable. \"Nanosheet FET with wrap-around inner spacer\" (US-9842914). https://patentable.app/patents/US-9842914","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842914","json":"https://patentable.app/api/llm-context/US-9842914","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:22:03.736Z"}