{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842924","patent":{"patent_number":"US-9842924","title":"Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode","assignee":null,"inventors":[],"filing_date":"2016-08-25T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A semiconductor device includes a layer having first and second surfaces, a first region including central and peripheral portions, and a second region on the first region. First trenches extend into the first surface and terminate within the first region in the central portion. Each first trench includes a first electrode and a gate electrode over the first electrode. The first and gate electrodes are spaced from the first and second regions by a first insulating layer. A second trench extends into the first surface and terminates within the first region in the peripheral portion. The second trench includes a second electrode and a third electrode over the second electrode. The second and third electrodes are spaced from the first and second regions by a second insulating layer. A fourth electrode overlies the first insulating layer in the central portion and the second insulating layer in the peripheral portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode","description":"A semiconductor device includes a layer having first and second surfaces, a first region including central and peripheral portions, and a second region on the first region. First trenches extend into ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842924","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842924","citation_suggestion":"Patentable. \"Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode\" (US-9842924). https://patentable.app/patents/US-9842924","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842924","json":"https://patentable.app/api/llm-context/US-9842924","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:12.906Z"}