{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842926","patent":{"patent_number":"US-9842926","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-01-10T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device includes a pillar-shaped semiconductor layer and a first gate insulating film around the pillar-shaped semiconductor layer. A metal gate electrode is around the first gate insulating film and a metal gate line is connected to the gate electrode. A second gate insulating film is around a sidewall of an upper portion of the pillar-shaped semiconductor layer and a first contact made of a second metal surrounds the second gate insulating film. An upper portion of the first contact is electrically connected to an upper portion of the pillar-shaped semiconductor layer, and a third contact resides on the metal gate line. A lower portion of the third contact is made of the second metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A semiconductor device includes a pillar-shaped semiconductor layer and a first gate insulating film around the pillar-shaped semiconductor layer. A metal gate electrode is around the first gate insul","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842926","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842926","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9842926). https://patentable.app/patents/US-9842926","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842926","json":"https://patentable.app/api/llm-context/US-9842926","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:01.208Z"}