{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842935","patent":{"patent_number":"US-9842935","title":"Low temperature poly silicon (LTPS) thin film transistor (TFT) and the manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2015-08-28T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"The present disclosure discloses a LTPS TFT and the manufacturing method thereof. The method includes: forming a semiconductor layer and a LTPS layer on the same surface on a base layer; forming an oxide layer is formed on one side of the semiconductor layer facing away the base layer, and forming the oxide layer on one side of the LTPS layer facing away the base layer; forming a first photoresist layer of a first predetermined thickness on the oxide layer; arranging a corresponding first cobalt layer on each of the photoresist layers, a vertical projection of the first cobalt layer overlaps with the vertical projection of the corresponding first photoresist layer; doping high-concentration doping ions into a first specific area of the semiconductor layer. With such configuration, the number of the masking process is decreased and the manufacturing time is reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature poly silicon (LTPS) thin film transistor (TFT) and the manufacturing method thereof","description":"The present disclosure discloses a LTPS TFT and the manufacturing method thereof. The method includes: forming a semiconductor layer and a LTPS layer on the same surface on a base layer; forming an ox","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842935","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842935","citation_suggestion":"Patentable. \"Low temperature poly silicon (LTPS) thin film transistor (TFT) and the manufacturing method thereof\" (US-9842935). https://patentable.app/patents/US-9842935","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842935","json":"https://patentable.app/api/llm-context/US-9842935","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:51:27.078Z"}