{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842963","patent":{"patent_number":"US-9842963","title":"GaN-based LED epitaxial structure and preparation method thereof","assignee":null,"inventors":[],"filing_date":"2016-03-18T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":21,"abstract":"A GaN-based LED epitaxial structure comprises a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the non-doped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. For the GaN-based LED epitaxial structure and the preparation method thereof, the non-doped GaN buffer layer with the sandwich structure consisting of the GaN layer, the AlGaN layer and the GaN layer is used as a buffer layer, the buffer layer changes light scattering directions by using materials with different refractive indexes and thus the luminous efficiency can be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"GaN-based LED epitaxial structure and preparation method thereof","description":"A GaN-based LED epitaxial structure comprises a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminou","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842963","citation_suggestion":"Patentable. \"GaN-based LED epitaxial structure and preparation method thereof\" (US-9842963). https://patentable.app/patents/US-9842963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842963","json":"https://patentable.app/api/llm-context/US-9842963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:57:38.181Z"}