{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842964","patent":{"patent_number":"US-9842964","title":"Method for producing a semiconductor layer sequence","assignee":null,"inventors":[],"filing_date":"2015-04-15T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a second nitridic semiconductor layer having at least one opening on the first nitridic semiconductor layer, removing at least pail of the first nitridic semiconductor layer through the at least one opening in the second nitridic semiconductor layer, growing a third nitridic semiconductor layer on the second nitridic semiconductor layer, wherein the third nitridic semiconductor layer covers the at least one opening at least in places in such a way that at least one cavity free of a semiconductor material is present between the growth substrate and a subsequent semiconductor layers and removing the growth substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a semiconductor layer sequence","description":"A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842964","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842964","citation_suggestion":"Patentable. \"Method for producing a semiconductor layer sequence\" (US-9842964). https://patentable.app/patents/US-9842964","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842964","json":"https://patentable.app/api/llm-context/US-9842964","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:02.792Z"}