{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842988","patent":{"patent_number":"US-9842988","title":"Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications","assignee":null,"inventors":[],"filing_date":"2015-07-20T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":11,"abstract":"A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications","description":"A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron con","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842988","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842988","citation_suggestion":"Patentable. \"Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications\" (US-9842988). https://patentable.app/patents/US-9842988","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842988","json":"https://patentable.app/api/llm-context/US-9842988","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:43.070Z"}