{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9842990","patent":{"patent_number":"US-9842990","title":"Semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-12-21T00:00:00.000Z","publication_date":"2017-12-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"According to one embodiment, a semiconductor memory device includes a semiconductor layer, a gate electrode, a metal containing portion, and an insulating portion. The semiconductor layer includes a first region and a second region. The second region has at least one of a region being amorphous or a region having a crystallinity lower than a crystallinity of the first region. The gate electrode is apart from the first region in a first direction. The first direction crosses a second direction connecting the first region and the second region. The metal containing portion is apart from the second region in the first direction. At least a part of the metal containing portion overlaps the gate electrode in the second direction. The insulating portion is provided between the gate electrode and the first region and between the metal containing portion and the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing the same","description":"According to one embodiment, a semiconductor memory device includes a semiconductor layer, a gate electrode, a metal containing portion, and an insulating portion. The semiconductor layer includes a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9842990","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9842990","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing the same\" (US-9842990). https://patentable.app/patents/US-9842990","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9842990","json":"https://patentable.app/api/llm-context/US-9842990","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:15:51.966Z"}