{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847127","patent":{"patent_number":"US-9847127","title":"Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory","assignee":null,"inventors":[],"filing_date":"2016-11-21T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory device includes a sense amplifier coupled to a first read voltage during a first phase of a read operation and a second read voltage during a second phase of the read operation. A first and second bias voltages are based on the first and second read voltages and corresponding current on a bit line. A first capacitor includes a terminal coupled to the first and second bias voltages. A first amplifier includes an input coupled to another terminal of the first capacitor and another input coupled to a common mode voltage during the first phase and to a reference voltage during the second phase. A second capacitor includes a terminal coupled to an output of the first amplifier. A second amplifier includes an inverting input coupled to another terminal of the second capacitor and another input coupled to a common mode voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory","description":"A memory device includes a sense amplifier coupled to a first read voltage during a first phase of a read operation and a second read voltage during a second phase of the read operation. A first and s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847127","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847127","citation_suggestion":"Patentable. \"Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory\" (US-9847127). https://patentable.app/patents/US-9847127","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847127","json":"https://patentable.app/api/llm-context/US-9847127","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:31.350Z"}