{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847227","patent":{"patent_number":"US-9847227","title":"Method for forming patterns of semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-11-13T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A method for forming patterns of a semiconductor device includes preparing an etch target layer defined with a first region and a second region; forming a regular first feature which is positioned over the etch target layer in the first region and a random feature which is positioned over the etch target layer in the second region; forming a regular second feature over the regular first feature; forming first and second cutting barriers which expose a portion of the random feature, over the random feature; cutting the regular first feature using the regular second feature, to form a regular array feature; cutting the random feature using the first cutting barrier and the second cutting barrier, to form a random array feature; and etching the etch target layer by using the regular array feature and the random array feature, to form a regular array pattern and a random array pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming patterns of semiconductor device","description":"A method for forming patterns of a semiconductor device includes preparing an etch target layer defined with a first region and a second region; forming a regular first feature which is positioned ove","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847227","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847227","citation_suggestion":"Patentable. \"Method for forming patterns of semiconductor device\" (US-9847227). https://patentable.app/patents/US-9847227","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847227","json":"https://patentable.app/api/llm-context/US-9847227","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:19.520Z"}