{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847249","patent":{"patent_number":"US-9847249","title":"Buried etch stop layer for damascene bit line formation","assignee":null,"inventors":[],"filing_date":"2014-11-05T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A stack of layers is formed that includes first, second, and third dielectric layers. Contact plugs are then formed extending through the stack. Then a fourth dielectric layer is formed over the stack and contact plugs and trenches are formed through the fourth and third dielectric layers, extending to the second dielectric layer and exposing contact plugs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Buried etch stop layer for damascene bit line formation","description":"A stack of layers is formed that includes first, second, and third dielectric layers. Contact plugs are then formed extending through the stack. Then a fourth dielectric layer is formed over the stack","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847249","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847249","citation_suggestion":"Patentable. \"Buried etch stop layer for damascene bit line formation\" (US-9847249). https://patentable.app/patents/US-9847249","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847249","json":"https://patentable.app/api/llm-context/US-9847249","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:37.647Z"}