{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847252","patent":{"patent_number":"US-9847252","title":"Methods for forming 2-dimensional self-aligned vias","assignee":null,"inventors":[],"filing_date":"2017-03-08T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of processing a substrate includes: depositing an etch stop layer atop a first dielectric layer; forming a feature in the etch stop layer and the first dielectric layer; depositing a first metal layer to fill the feature; etching the first metal layer to form a recess; depositing a second dielectric layer to fill the recess wherein the second dielectric layer is a low-k material suitable as a metal and oxygen diffusion barrier; forming a patterned mask layer atop the substrate to expose a portion of the second dielectric layer and the etch stop layer; etching the exposed portion of the second dielectric layer to a top surface of the first metal layer to form a via in the second dielectric layer; and depositing a second metal layer atop the substrate, wherein the second metal layer is connected to the first metal layer by the via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming 2-dimensional self-aligned vias","description":"A method of processing a substrate includes: depositing an etch stop layer atop a first dielectric layer; forming a feature in the etch stop layer and the first dielectric layer; depositing a first me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847252","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847252","citation_suggestion":"Patentable. \"Methods for forming 2-dimensional self-aligned vias\" (US-9847252). https://patentable.app/patents/US-9847252","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847252","json":"https://patentable.app/api/llm-context/US-9847252","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:55.662Z"}