{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847311","patent":{"patent_number":"US-9847311","title":"Semiconductor device and manufacturing method for the semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-11-03T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of the first conductive member by a first bonding layer. A second electrode on the second semiconductor element is bonded to a second stack part of the second conductive member by a second bonding layer. A first joint part of the first conductive member is bonded to a second joint part of the second conductive member by an intermediate bonding layer. A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method for the semiconductor device","description":"A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847311","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847311","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method for the semiconductor device\" (US-9847311). https://patentable.app/patents/US-9847311","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847311","json":"https://patentable.app/api/llm-context/US-9847311","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:31:12.624Z"}