{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847320","patent":{"patent_number":"US-9847320","title":"Semiconductor structure and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-06-03T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device is disclosed. The semiconductor device includes: a first die including a signal pad region and a power pad region; a redistribution layer (RDL) over the first die; a plurality of first connectors over the RDL and at a side of the RDL opposite to the first die; a plurality of second connectors over the RDL and at the side opposite to the first die; a second die including a signal pad region and a power pad region, wherein the second die is face-to-face and electrically connected to the first die through the first connectors and the RDL, wherein a center of the second die is laterally shifted with respect to a center of the first die so as to correspond the signal pad region of the first die to the signal pad region of the second die. An associated method for fabricating the same is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method of fabricating the same","description":"A semiconductor device is disclosed. The semiconductor device includes: a first die including a signal pad region and a power pad region; a redistribution layer (RDL) over the first die; a plurality o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847320","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847320","citation_suggestion":"Patentable. \"Semiconductor structure and method of fabricating the same\" (US-9847320). https://patentable.app/patents/US-9847320","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847320","json":"https://patentable.app/api/llm-context/US-9847320","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:18.637Z"}