{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847330","patent":{"patent_number":"US-9847330","title":"Fin field effect transistor and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-03-16T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"Fin field effect transistors (FinFETs) and method for fabricating the same are disclosed. One of the FinFETs includes a substrate, an insulator, first and second gates, an opening, first and second dielectric layers. The substrate includes first and second semiconductor fins and a trench therebetween. The insulator is disposed in the trench. The first and second gates are respectively disposed on the first and second semiconductor fins. The opening is disposed between the first gate and the second gate. The first dielectric layer is disposed in the opening to electrically insulate the first and second gates and includes a slit. The second dielectric layer is filled in the slit, wherein the opening has a first width in a direction along which the first and second gates extend, the slit has a second width in the direction, and a ratio of the first width to the second width is larger than 2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor and method for fabricating the same","description":"Fin field effect transistors (FinFETs) and method for fabricating the same are disclosed. One of the FinFETs includes a substrate, an insulator, first and second gates, an opening, first and second di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847330","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847330","citation_suggestion":"Patentable. \"Fin field effect transistor and method for fabricating the same\" (US-9847330). https://patentable.app/patents/US-9847330","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847330","json":"https://patentable.app/api/llm-context/US-9847330","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:16:34.198Z"}