{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847334","patent":{"patent_number":"US-9847334","title":"Structure and formation method of semiconductor device with channel layer","assignee":null,"inventors":[],"filing_date":"2016-11-18T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Structures and formation methods of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a first lattice constant and having a PMOS region and an NMOS region. The semiconductor device further includes first and second fin structures over the PMOS region and NMOS region respectively. The first fin structure includes a buffer layer with a second lattice constant and a first channel layer. The lattice constant difference between the first channel layer and the buffer layer is smaller than that between the first channel layer and the semiconductor layer. The first channel layer has a third lattice constant, which is greater than the second lattice constant. The first lattice constant is greater than the second lattice constant. The second fin structure includes a second channel layer. The second channel layer has a fourth lattice constant which is less than the first lattice constant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and formation method of semiconductor device with channel layer","description":"Structures and formation methods of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a first lattice constant and having a PMOS region and an NMOS ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847334","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847334","citation_suggestion":"Patentable. \"Structure and formation method of semiconductor device with channel layer\" (US-9847334). https://patentable.app/patents/US-9847334","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847334","json":"https://patentable.app/api/llm-context/US-9847334","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:39:55.637Z"}