{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847347","patent":{"patent_number":"US-9847347","title":"Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereof","assignee":null,"inventors":[],"filing_date":"2016-11-07T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate, a first transistor and a second transistor. The substrate includes a semiconductor-on-insulator region and a bulk region. The first transistor is provided at the semiconductor-on-insulator region and includes a first gate structure and a first channel region provided in a layer of semiconductor material over a layer of electrically insulating material. The second transistor is provided at the bulk region and includes a second gate structure and a second channel region provided in a bulk semiconductor material. A plane of an interface between the second channel region and the second gate structure is not above a plane of an interface between the bulk semiconductor material and the layer of electrically insulating material in the semiconductor-on-insulator region. A height of the second gate structure is greater than a height of the first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereof","description":"A semiconductor structure includes a substrate, a first transistor and a second transistor. The substrate includes a semiconductor-on-insulator region and a bulk region. The first transistor is provid","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847347","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847347","citation_suggestion":"Patentable. \"Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereof\" (US-9847347). https://patentable.app/patents/US-9847347","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847347","json":"https://patentable.app/api/llm-context/US-9847347","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:14.781Z"}