{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847397","patent":{"patent_number":"US-9847397","title":"Method of forming split gate memory with improved reliability","assignee":null,"inventors":[],"filing_date":"2016-06-15T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A first doped region extends from a top surface of a substrate to a first depth. An implant into the first doped region forms a second doped region of a second conductivity type. The second doped region extends from the top surface to a second depth that is less than the first depth. A split gate NVM structure has select and control gates over the second doped region. A drain region of the second conductivity type is formed adjacent to the select gate. A source region of the second conductivity type is formed adjacent to the control gate. Angled implants into the second doped region form a third doped region of the first conductivity type under a portion of the select gate and a fourth doped region of the first conductivity type under a portion of the control gate. The drain and source regions adjoin the third and fourth regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming split gate memory with improved reliability","description":"A first doped region extends from a top surface of a substrate to a first depth. An implant into the first doped region forms a second doped region of a second conductivity type. The second doped regi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847397","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847397","citation_suggestion":"Patentable. \"Method of forming split gate memory with improved reliability\" (US-9847397). https://patentable.app/patents/US-9847397","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847397","json":"https://patentable.app/api/llm-context/US-9847397","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:04:16.130Z"}