{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847399","patent":{"patent_number":"US-9847399","title":"Semiconductor device and a method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-07-21T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"In a method of manufacturing a semiconductor device, an isolation region is formed in a substrate. The isolation region surrounds an active region of the substrate in plan view and includes an insulating material. A first dielectric layer is formed over the active region. A mask layer is formed on at least a part of a border line between the isolation region and the active region. The mask layer covers a part, but not entirety, of the first dielectric layer and a part of the isolation region surrounding the active region. The first dielectric layer not covered by the mask layer is removed such that a part of the active region is exposed. After the first dielectric layer is removed, the mask layer is removed. A second dielectric layer is formed so that a gate dielectric layer is formed. A gate electrode is formed over the gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and a method for fabricating the same","description":"In a method of manufacturing a semiconductor device, an isolation region is formed in a substrate. The isolation region surrounds an active region of the substrate in plan view and includes an insulat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847399","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847399","citation_suggestion":"Patentable. \"Semiconductor device and a method for fabricating the same\" (US-9847399). https://patentable.app/patents/US-9847399","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847399","json":"https://patentable.app/api/llm-context/US-9847399","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:36.935Z"}