{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847407","patent":{"patent_number":"US-9847407","title":"Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage","assignee":null,"inventors":[],"filing_date":"2012-11-15T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"Disclosed are structures and methods related to metallization of a doped gallium arsenide (GaAs) layer. In some embodiments, such metallization can include a tantalum nitride (TaN) layer formed on the doped GaAs layer, and a metal layer formed on the TaN layer. Such a combination can yield a Schottky diode having a low turn-on voltage, with the metal layer acting as an anode and an electrical contact connected to the doped GaAs layer acting as a cathode. Such a Schottky diode can be utilized in applications such as radio-frequency (RF) power detection, reference-voltage generation using a clamp diode, and photoelectric conversion. In some embodiments, the low turn-on Schottky diode can be fabricated utilizing heterojunction bipolar transistor (HBT) processes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage","description":"Disclosed are structures and methods related to metallization of a doped gallium arsenide (GaAs) layer. In some embodiments, such metallization can include a tantalum nitride (TaN) layer formed on the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847407","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847407","citation_suggestion":"Patentable. \"Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage\" (US-9847407). https://patentable.app/patents/US-9847407","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847407","json":"https://patentable.app/api/llm-context/US-9847407","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:06:50.456Z"}