{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847409","patent":{"patent_number":"US-9847409","title":"Semiconductor device and manufacturing method for the same","assignee":null,"inventors":[],"filing_date":"2015-07-14T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A semiconductor device provides an element arrangement region on a semiconductor substrate including: a first semiconductor region on the semiconductor substrate; a second semiconductor region on the first semiconductor region; multiple trench gates penetrating the first semiconductor region and reaching the second semiconductor region; a third semiconductor region contacting the trench gate; a fourth semiconductor region on a rear surface; a first electrode connected to the first and second semiconductor regions; and a second electrode connected to the fourth semiconductor region. Each trench gate includes a main trench gate for generating a channel and a dummy trench gate for improving a withstand voltage of a component. The device further includes: a dummy gate wiring for applying a predetermined voltage to the dummy trench gate; and a dummy pad connected to the dummy gate wiring. The dummy pad and the first electrode are connected by a conductive member."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method for the same","description":"A semiconductor device provides an element arrangement region on a semiconductor substrate including: a first semiconductor region on the semiconductor substrate; a second semiconductor region on the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847409","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847409","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method for the same\" (US-9847409). https://patentable.app/patents/US-9847409","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847409","json":"https://patentable.app/api/llm-context/US-9847409","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:06.920Z"}