{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9847432","patent":{"patent_number":"US-9847432","title":"Forming III-V device structures on (111) planes of silicon fins","assignee":null,"inventors":[],"filing_date":"2013-09-25T00:00:00.000Z","publication_date":"2017-12-19T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"Methods of forming high voltage (111) silicon nano-structures are described. Those methods and structures may include forming a III-V device layer on (111) surface of a silicon fin structure, forming a 2DEG inducing polarization layer on the III-V device layer, forming a source/drain material on a portion of the III-V device layer on terminal ends of the silicon fin. A middle portion of the silicon fin structure between the source and drain regions may be removed, and backfilled with a dielectric material, and then a gate dielectric and a gate material may be formed on the III-V device layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming III-V device structures on (111) planes of silicon fins","description":"Methods of forming high voltage (111) silicon nano-structures are described. Those methods and structures may include forming a III-V device layer on (111) surface of a silicon fin structure, forming ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9847432","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9847432","citation_suggestion":"Patentable. \"Forming III-V device structures on (111) planes of silicon fins\" (US-9847432). https://patentable.app/patents/US-9847432","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9847432","json":"https://patentable.app/api/llm-context/US-9847432","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:21:11.319Z"}